Обзорная статья

Two-Dimensional Near-Atom-Thickness Materials for Emerging Neuromorphic Devices and Applications

Tae‐Jun KoNanoScience Technology Center, University of Central Florida, Orlando, FL 32826, USAHao LiNanoScience Technology Center, University of Central Florida, Orlando, FL 32826, USASohrab Alex MofidNanoScience Technology Center, University of Central Florida, Orlando, FL 32826, USAChanghyeon YooNanoScience Technology Center, University of Central Florida, Orlando, FL 32826, USAEmmanuel OkogbueDepartment of Electrical and Computer Engineering, University of Central Florida, Orlando, FL 32816, USASang Sub HanDepartment of Materials Science and Engineering, Seoul National University, Seoul, 08826, South KoreaMashiyat Sumaiya ShawkatDepartment of Electrical and Computer Engineering, University of Central Florida, Orlando, FL 32816, USAAdithi KrishnaprasadDepartment of Electrical and Computer Engineering, University of Central Florida, Orlando, FL 32816, USAMolla Manjurul IslamDepartment of Physics, University of Central Florida, Orlando, FL 32816, USADurjoy DevDepartment of Electrical and Computer Engineering, University of Central Florida, Orlando, FL 32816, USAYongjun ShinDepartment of Materials Science and Engineering, Seoul National University, Seoul, 08826, South KoreaKyu Hwan OhDepartment of Materials Science and Engineering, Seoul National University, Seoul, 08826, South KoreaGwan‐Hyoung LeeDepartment of Materials Science and Engineering, Seoul National University, Seoul, 08826, South KoreaTania RoyDepartment of Materials Science and Engineering, University of Central Florida, Orlando, FL 32816, USAYeonwoong JungDepartment of Electrical and Computer Engineering, University of Central Florida, Orlando, FL 32816, USA

2020en

ABI

Аннотация

Two-dimensional (2D) layered materials and their heterostructures have recently been recognized as promising building blocks for futuristic brain-like neuromorphic computing devices. They exhibit unique properties such as near-atomic thickness, dangling-bond-free surfaces, high mechanical robustness, and electrical/optical tunability. Such attributes unattainable with traditional electronic materials are particularly promising for high-performance artificial neurons and synapses, enabling energy-efficient operation, high integration density, and excellent scalability. In this review, diverse 2D materials explored for neuromorphic applications, including graphene, transition metal dichalcogenides, hexagonal boron nitride, and black phosphorous, are comprehensively overviewed. Their promise for neuromorphic applications are fully discussed in terms of material property suitability and device operation principles. Furthermore, up-to-date demonstrations of neuromorphic devices based on 2D materials or their heterostructures are presented. Lastly, the challenges associated with the successful implementation of 2D materials into large-scale devices and their material quality control will be outlined along with the future prospect of these emergent materials.

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Идентификаторы

DOI: 10.1016/j.isci.2020.101676

Цитирования и источники

Цитирований: 2Использованных источников: 0

Показатели — AkademScholar