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Nanowires for UV–vis–IR Optoelectronic Synaptic Devices

Xue ChenInstitute of Microscale Optoelectronics Shenzhen University Shenzhen 518060 P. R. ChinaBingkun ChenCollege of Physics and Optoelectronic Engineering Harbin Engineering University Harbin 150001 P. R. ChinaBei JiangFaculty of Physics and Electronic Science Hubei University Wuhan 430062 P. R. ChinaTengfei GaoDepartment of Electrical and Computer Engineering University of California Davis California 95616 USAGang ShangInstitute of Microscale Optoelectronics Shenzhen University Shenzhen 518060 P. R. ChinaSu‐Ting HanCollege of Electronics and Information Engineering Shenzhen University Shenzhen 518060 P. R. ChinaChi‐Ching KuoInstitute of Organic and Polymeric Materials Research and Development Center of Smart Textile Technology National Taipei University of Technology Taipei 10608 TaiwanVellaisamy A. L. RoyJames Watt School of Engineering University of Glasgow Glasgow G12 8QQ UKYe ZhouInstitute for Advanced Study Shenzhen University Shenzhen 518060 P. R. China
2022en
ABI

Аннотация

Abstract Simulating biological synaptic functionalities through artificial synaptic devices opens up an innovative way to overcome the von Neumann bottleneck at the device level. Artificial optoelectronic synapses provide a non‐contact method to operate the devices and overcome the shortcomings of electrical synaptic devices. With the advantages of high photoelectric conversion efficiency, adjustable light absorption coefficient, and broad spectral range, nanowires (NWs)‐based optoelectronic synapses have attracted wide attention. Herein, to better promote the applications of nanowires‐based optoelectronic synapses for future neuromorphic systems, the functionalities of optoelectronic synaptic devices and the current progress of NWs optoelectronic synaptic devices in UV–vis–IR spectral range are introduced. Furthermore, a bridge between NWs‐based optoelectronic synaptic device and the neuromorphic system is established. Challenges for the forthcoming development of NWs optoelectronic synapses are also discussed. This review may offer a vision into the design and neuromorphic applications of NWs‐based optoelectronic synaptic devices.

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