Перейти к основному содержанию
AkademIndex

Продукты

Для разработчиков

AkademBaseОткрытый API экосистемы
Статья

Photoluminescence from Chemically Exfoliated MoS<sub>2</sub>

Goki EdaDepartment of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, U.KHisato YamaguchiMaterials Science and Engineering, Rutgers University, 607 Taylor Road, Piscataway, New Jersey 08854, United StatesDamien VoiryMaterials Science and Engineering, Rutgers University, 607 Taylor Road, Piscataway, New Jersey 08854, United StatesTakeshi FujitaJST, PRESTO, 4-1-8 Honcho Kawaguchi, Saitama 332-0012, JapanMingwei ChenWPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, JapanManish ChhowallaMaterials Science and Engineering, Rutgers University, 607 Taylor Road, Piscataway, New Jersey 08854, United States
2011en
ABI

Аннотация

A two-dimensional crystal of molybdenum disulfide (MoS2) monolayer is a photoluminescent direct gap semiconductor in striking contrast to its bulk counterpart. Exfoliation of bulk MoS2 via Li intercalation is an attractive route to large-scale synthesis of monolayer crystals. However, this method results in loss of pristine semiconducting properties of MoS2 due to structural changes that occur during Li intercalation. Here, we report structural and electronic properties of chemically exfoliated MoS2. The metastable metallic phase that emerges from Li intercalation was found to dominate the properties of as-exfoliated material, but mild annealing leads to gradual restoration of the semiconducting phase. Above an annealing temperature of 300 °C, chemically exfoliated MoS2 exhibit prominent band gap photoluminescence, similar to mechanically exfoliated monolayers, indicating that their semiconducting properties are largely restored.

Перевод пока недоступен

Идентификаторы

Цитирования и источники

Цитирований: 3Использованных источников: 0