High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity
Kibum KangDepartment of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853, USASaien XieSchool of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USALujie HuangDepartment of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853, USAYimo HanSchool of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USAPinshane Y. HuangSchool of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USAKin Fai Mak1] Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA [2] Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USACheol‐Joo KimDepartment of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853, USADavid A. Muller1] School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA [2] Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USAJiwoong Park1] Department of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853, USA [2] Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
2015en
ABI
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