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Electronic and magnetic properties of single-layer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>M</mml:mi><mml:mi mathvariant="normal">P</mml:mi><mml:msub><mml:mi>X</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>metal phosphorous trichalcogenides

Bheema Lingam ChittariDepartment of Physics, University of Seoul, Seoul 02504, KoreaYoungju ParkDepartment of Physics, University of Seoul, Seoul 02504, KoreaDongkyu LeeDepartment of Physics, University of Seoul, Seoul 02504, KoreaMoonsup HanDepartment of Physics, University of Seoul, Seoul 02504, KoreaA. H. MacDonaldDepartment of Physics, The University of Texas at Austin, Austin, Texas 78712, USAE. H. HwangSKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 16419, KoreaJeil JungDepartment of Physics, University of Seoul, Seoul 02504, Korea
2016lv
ABI

Аннотация

We survey the electronic structure and magnetic properties of two-dimensional (2D) $M\mathrm{P}{X}_{3}$ ($M=\text{V},\text{Cr},\text{Mn},\text{Fe},\text{Co},\text{Ni},\text{Cu},\text{Zn}$, and $X=\text{S},\text{Se},\text{Te}$) transition-metal chalcogenophosphates to shed light on their potential role as single-layer van der Waals materials that possess magnetic order. Our ab initio calculations predict that most of these single-layer materials are antiferromagnetic semiconductors. The band gaps of the antiferromagnetic states decrease as the atomic number of the chalcogen atom increases (from S to Se to Te), leading in some cases to half-metallic ferromagnetic states or to nonmagnetic metallic states. We find that the competition between antiferromagnetic and ferromagnetic states can be substantially influenced by gating and by strain engineering. The sensitive interdependence we find between magnetic, structural, and electronic properties establishes the potential of this 2D materials class for applications in spintronics.

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