Beyond 11% Efficiency: Characteristics of State‐of‐the‐Art Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> Solar Cells
Teodor K. TodorovIBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598Jiang TangIBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598Santanu BagIBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598Oki GunawanIBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598Tayfun GokmenIBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598Yu ZhuIBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598David B. MitziIBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598
2012en
ABI
Аннотация
A world-record CZTSSe device is reported, surpassing 11% power conversion efficiency for the first time. The results reflect not only higher efficiency, but also other improved device characteristics, such as fill factor and short circuit current. The improvement in CZTSSe devices continues to point to significant promise for the kesterite-based absorbers.
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