Статья

2D MoS2-Based Threshold Switching Memristor for Artificial Neuron

Durjoy DevDepartment of Electrical and Computer Engineering, University of Central Florida, Orlando, USAAdithi KrishnaprasadDepartment of Electrical and Computer Engineering, University of Central Florida, Orlando, USAMashiyat Sumaiya ShawkatDepartment of Electrical and Computer Engineering, University of Central Florida, Orlando, USAZhezhi HeSchool of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, USASonali DasDepartment of Electrical and Computer Engineering, University of Central Florida, Orlando, USADeliang FanSchool of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, USAHee‐Suk ChungAnalytical Research Division, Korea Basic Science Institute, Jeonju, South KoreaYeonwoong JungDepartment of Electrical and Computer Engineering, University of Central Florida, Orlando, USATania RoyDepartment of Electrical and Computer Engineering, University of Central Florida, Orlando, USA

2020en

ABI

Аннотация

In this work, we use a two-terminal 2D MoS 2 -based memristive device to emulate an artificial neuron. The Au/MoS 2 /Ag device exhibits volatile resistance switching characteristics with a low threshold voltage and a high ON-OFF ratio of 10 6 , originating from an Ag diffusion-based filamentary process. The leaky integrate-and-fire neuron implemented with this device successfully emulates the key characteristics of a biological neuron.

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Идентификаторы

DOI: 10.1109/led.2020.2988247

Цитирования и источники

Цитирований: 2Использованных источников: 0

Показатели — AkademScholar

2D MoS<sub>2</sub>-Based Threshold Switching Memristor for Artificial Neuron

Аннотация

Идентификаторы

Цитирования и источники