Статья

Enhanced Photoresponsivity of a GaAs Nanowire Metal-Semiconductor-Metal Photodetector by Adjusting the Fermi Level

Xue ChenState Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, ChinaDengkui WangState Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, ChinaTuo WangState Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, ChinaZhenyu YangKey Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education School of Physics and Technology, Wuhan University, Wuhan 430072, ChinaXuming ZouKey Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education School of Physics and Electronics, Hunan University, Changsha 410082, ChinaPeng WangState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, ChinaWenjin LuoState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, ChinaQing LiState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, ChinaLei LiaoKey Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education School of Physics and Electronics, Hunan University, Changsha 410082, ChinaWeida HuState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, ChinaZhipeng WeiState Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China

2019en

ABI

Аннотация

Metal-semiconductor-metal (MSM)-structured GaAs-based nanowire photodetectors have been widely reported because they are promising as an alternative for high-performance devices. Owing to the Schottky built-in electric fields in the MSM structure photodetectors, enhancements in photoresponsivity can be realized. Thus, strengthening the built-in electric field is an efficacious way to make the detection capability better. In this study, we fabricate a single GaAs nanowire MSM photodetector with superior performance by doping-adjusting the Fermi level to strengthen the built-in electric field. An outstanding responsivity of 1175 A/W is obtained. This is two orders of magnitude better than the responsivity of the undoped sample. Scanning photocurrent mappings and simulations are performed to confirm that the enhancement in responsivity is because of the increase in the hole Schottky built-in electric field, which can separate and collect the photogenerated carriers more effectively. The eloquent evidence clearly proves that doping-adjusting the Fermi level has great potential applications in high-performance GaAs nanowire photodetectors and other functional photodetectors.

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Идентификаторы

DOI: 10.1021/acsami.9b07891

Цитирования и источники

Цитирований: 2Использованных источников: 0

Показатели — AkademScholar