Enhancement of the Plant Grafting Technique with Dielectric Barrier Discharge Cold Atmospheric Plasma and Plasma-Treated Solution
Е. М. КончековProkhorov General Physics Institute of the Russian Academy of Sciences, 119991 Moscow, RussiaЛ. В. КоликProkhorov General Physics Institute of the Russian Academy of Sciences, 119991 Moscow, RussiaYury K. DanilejkoProkhorov General Physics Institute of the Russian Academy of Sciences, 119991 Moscow, RussiaS. V. BelovProkhorov General Physics Institute of the Russian Academy of Sciences, 119991 Moscow, RussiaК. В. АртемьевProkhorov General Physics Institute of the Russian Academy of Sciences, 119991 Moscow, RussiaMaxim E. AstashevProkhorov General Physics Institute of the Russian Academy of Sciences, 119991 Moscow, RussiaTatyana PavlikProkhorov General Physics Institute of the Russian Academy of Sciences, 119991 Moscow, RussiaV. LukaninProkhorov General Physics Institute of the Russian Academy of Sciences, 119991 Moscow, RussiaAlexey KutyrevFederal Scientific Agroengineering Center VIM, 109428 Moscow, RussiaIgor SmirnovFederal Scientific Agroengineering Center VIM, 109428 Moscow, RussiaSergey V. GudkovFederal Scientific Agroengineering Center VIM, 109428 Moscow, Russia
2022en
ABI
Аннотация
A garden plant grafting technique enhanced by cold plasma (CAP) and plasma-treated solutions (PTS) is described for the first time. It has been shown that CAP created by a dielectric barrier discharge (DBD) and PTS makes it possible to increase the growth of Pyrus communis L. by 35–44%, and the diameter of the root collar by 10–28%. In this case, the electrical resistivity of the graft decreased by 20–48%, which indicated the formation of a more developed vascular system at the rootstock–scion interface. The characteristics of DBD CAP and PTS are described in detail.
Перевод пока недоступен
Идентификаторы
Цитирования и источники
Цитирований: 2Использованных источников: 0