Magnetic properties of Mn-doped ZnO
Tomoteru FukumuraDepartment of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, JapanZhengwu JinDepartment of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, JapanM. KawasakiDepartment of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, JapanT. ShonoMaterials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, JapanTakuya HasegawaMaterials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, JapanShin‐ya KoshiharaDepartment of Materials Science, Tokyo Institute of Technology, Tokyo 152-8551, JapanHideomi KoinumaFrontier Collaborative Research Center, and Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
2001en
ABI
Аннотация
We report on the magnetic properties of an oxide-diluted magnetic semiconductor (DMS), Zn0.64Mn0.36O. The temperature dependence of the magnetization shows a spin-glass behavior with the large magnitude of the Curie–Weiss temperature, corresponding to a stronger antiferromagnetic exchange coupling than other II–VI DMSs. The small effective Mn moment (x̄∼0.02) under high field also represents a strong antiferromagnetic exchange coupling in this compound.
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