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Structural, optical, and magnetic studies of manganese-doped zinc oxide hierarchical microspheres by self-assembly of nanoparticles

Yao-Ming HaoKey Lab for Special Functional Materials of Ministry of Education, Henan University, Kaifeng, 475004, People's Republic of China. [email protected]Shiyun LouKey Lab for Special Functional Materials of Ministry of Education, Henan University, Kaifeng, 475004, People's Republic of ChinaShaomin ZhouKey Lab for Special Functional Materials of Ministry of Education, Henan University, Kaifeng, 475004, People's Republic of ChinaRuiJian YuanKey Lab for Special Functional Materials of Ministry of Education, Henan University, Kaifeng, 475004, People's Republic of ChinaGong-Yu ZhuKey Lab for Special Functional Materials of Ministry of Education, Henan University, Kaifeng, 475004, People's Republic of ChinaNing LiKey Lab for Special Functional Materials of Ministry of Education, Henan University, Kaifeng, 475004, People's Republic of China
2012en
ABI

Аннотация

In this study, a series of manganese [Mn]-doped zinc oxide [ZnO] hierarchical microspheres [HMSs] are prepared by hydrothermal method only using zinc acetate and manganese acetate as precursors and ethylene glycol as solvent. X-ray diffraction indicates that all of the as-obtained samples including the highest Mn (7 mol%) in the crystal lattice of ZnO have a pure phase (hexagonal wurtzite structure). A broad Raman spectrum from as-synthesized doping samples ranges from 500 to 600 cm-1, revealing the successful doping of paramagnetic Mn2+ ions in the host ZnO. Optical absorption analysis of the samples exhibits a blueshift in the absorption band edge with increasing dopant concentration, and corresponding photoluminescence spectra show that Mn doping suppresses both near-band edge UV emission and defect-related blue emission. In particular, magnetic measurements confirm robust room-temperature ferromagnetic behavior with a high Curie temperature exceeding 400 K, signifying that the as-formed Mn-doped ZnO HMSs will have immense potential in spintronic devices and spin-based electronic technologies.

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