Room-temperature ferromagnetism and in-plane magnetic anisotropy characteristics of nonpolar GaN:Mn films
Лили СунSemiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road A35, Beijing 100083, People's Republic of ChinaFawang YanSemiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road A35, Beijing 100083, People's Republic of ChinaHuixiao ZhangSemiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road A35, Beijing 100083, People's Republic of ChinaJunxi WangSemiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road A35, Beijing 100083, People's Republic of ChinaGuohong WangSemiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road A35, Beijing 100083, People's Republic of ChinaYiping ZengSemiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road A35, Beijing 100083, People's Republic of ChinaJinmin LiSemiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road A35, Beijing 100083, People's Republic of China
2009en
ABI
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