Mott Relation for Anomalous Hall and Nernst Effects in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>Ga</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi>Mn</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:mi>As</mml:mi></mml:math>Ferromagnetic Semiconductors
Yong PuDepartment of Physics and Astronomy, University of California, Riverside, California 92521, USADaichi ChibaSemiconductor Spintronics Project, ERATO-JST, Tokyo, Japan, and Laboratory of Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai, JapanF. MatsukuraSemiconductor Spintronics Project, ERATO-JST, Tokyo, Japan, and Laboratory of Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai, JapanHideo OhnoSemiconductor Spintronics Project, ERATO-JST, Tokyo, Japan, and Laboratory of Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai, JapanJing ShiDepartment of Physics and Astronomy, University of California, Riverside, California 92521, USA
2008lv
ABI
Аннотация
The Mott relation between the electrical and thermoelectric transport coefficients normally holds for phenomena involving scattering. However, the anomalous Hall effect (AHE) in ferromagnets may arise from intrinsic spin-orbit interaction. In this work, we have simultaneously measured AHE and the anomalous Nernst effect (ANE) in Ga1-xMnxAs ferromagnetic semiconductor films, and observed an exceptionally large ANE at zero magnetic field. We further show that AHE and ANE share a common origin and demonstrate the validity of the Mott relation for the anomalous transport phenomena.
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