Tunable resistive switching of vertical ReSe2/graphene hetero-structure enabled by Schottky barrier height and DUV light
Shania RehmanDept of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul, 05006, Republic of KoreaHonggyun KimDept of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul, 05006, Republic of KoreaMuhammad Farooq KhanDept of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul, 05006, Republic of KoreaJi‐Hyun HurDept of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul, 05006, Republic of KoreaJonghwa EomGraphene Research Institute-Texas Photonics Center International Research Center (GRI–TPC IRC), Sejong University, Seoul, 05006, Republic of KoreaDeok‐kee KimDept of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul, 05006, Republic of Korea
2020en
ABI
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