Electronic, mechanical and piezoelectric properties of glass-like complex Na<sub>2</sub>Si<sub>1−<i>x</i></sub>Ge<sub><i>x</i></sub>O<sub>3</sub> (<i>x</i> = 0.0, 0.25, 0.50, 0.75, 1.0)
R. ZosiamlianaDepartment of Physics, Mizoram University, Aizawl-796004, IndiaB. ChettriDepartment of Physics, North-Eastern Hill University, Shillong-793022, Meghalaya, IndiaGuilherme S. L. FabrisPostgraduate Program in Materials Science and Engineering, Federal University of Rio Grande do Norte, 59078-970 Natal, RN, BrazilJúlio R. SambranoModeling and Molecular Simulation Group, Sao Paulo State University Julio de Mesquita Filho, Bauru, SP, BrazilSherzod Abdullaev"Editory" LLC, Tashkent, UzbekistanG. AbdurakhmanovNational University of Uzbekistan, 4 Universitet str., 100174 Tashkent, UzbekistanDibya Prakash RaiDepartment of Physics, Physical Sciences Research Center (PSRC), Pachhunga University College, Mizoram University, Aizawl-796001, India
ABI
Аннотация
) semiconductors. The studied systems have shown mechanical stabilities by satisfying the Born criteria for mechanical stability. The calculated results have shown highly anisotropic behaviour and high melting temperature, which are a signature of glass materials. The piezoelectric tensor (both direct and converse) is computed. The results thus obtained predict that the systems under investigation are potential piezoelectric materials for energy harvesting.
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