Статья

A room-temperature magnetic semiconductor from a ferromagnetic metallic glass

Wenjian LiuSchool of Materials Science and Engineering, Tsinghua University, Beijing 100084, ChinaHongxia ZhangSchool of Materials Science and Engineering, Tsinghua University, Beijing 100084, ChinaJin-an ShiBeijing Laboratory for Electron Microscopy, Institute of Physics, CAS, Beijing 100190, ChinaZhongchang WangWPI Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-8577, JapanCheng SongSchool of Materials Science and Engineering, Tsinghua University, Beijing 100084, ChinaX. R. WangHKUST Shenzhen Research Institute, Shenzhen 518057, ChinaSiyuan LuSchool of Materials Science and Engineering, Tsinghua University, Beijing 100084, ChinaXiangjun ZhouSchool of Materials Science and Engineering, Tsinghua University, Beijing 100084, ChinaLin GuBeijing Laboratory for Electron Microscopy, Institute of Physics, CAS, Beijing 100190, ChinaD. V. LouzguineWPI Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-8577, JapanMingwei ChenWPI Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-8577, JapanKefu YaoSchool of Materials Science and Engineering, Tsinghua University, Beijing 100084, ChinaNa ChenSchool of Materials Science and Engineering, Tsinghua University, Beijing 100084, China

2016en

ABI

Аннотация

Abstract Emerging for future spintronic/electronic applications, magnetic semiconductors have stimulated intense interest due to their promises for new functionalities and device concepts. So far, the so-called diluted magnetic semiconductors attract many attentions, yet it remains challenging to increase their Curie temperatures above room temperature, particularly those based on III–V semiconductors. In contrast to the concept of doping magnetic elements into conventional semiconductors to make diluted magnetic semiconductors, here we propose to oxidize originally ferromagnetic metals/alloys to form new species of magnetic semiconductors. We introduce oxygen into a ferromagnetic metallic glass to form a Co 28.6 Fe 12.4 Ta 4.3 B 8.7 O 46 magnetic semiconductor with a Curie temperature above 600 K. The demonstration of p – n heterojunctions and electric field control of the room-temperature ferromagnetism in this material reflects its p -type semiconducting character, with a mobility of 0.1 cm 2 V −1 s −1 . Our findings may pave a new way to realize high Curie temperature magnetic semiconductors with unusual multifunctionalities.

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Идентификаторы

DOI: 10.1038/ncomms13497

Цитирования и источники

Цитирований: 3Использованных источников: 0

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