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Polycrystalline CdSeTe/CdTe Absorber Cells With 28 mA/cm<sup>2</sup> Short-Circuit Current

Amit MunshiNext Generation PV Center, Colorado State University, Fort Collins, CO, USAJason M. KephartNext Generation PV Center, Colorado State University, Fort Collins, CO, USAAli AbbasCentre for Renewable Energy Systems Technology, Loughborough University, Leicestershire, U.KJohn RaguseDepartment of Physics, Colorado State University, Fort Collins, CO, USAJ.-N. BeaudryK. BarthNext Generation PV Center, Colorado State University, Fort Collins, CO, USAJames R. SitesDepartment of Physics, Colorado State University, Fort Collins, CO, USAJohn M. WallsCentre for Renewable Energy Systems Technology, Loughborough University, Leicestershire, U.KWalajabad SampathNext Generation PV Center, Colorado State University, Fort Collins, CO, USA
2017en
ABI

Аннотация

An 800 nm CdSeTe layer was added to the CdTe absorber used in high-efficiency CdTe cells to increase the current and produce an increase in efficiency. The CdSeTe layer employed had a band-gap near 1.41 eV, compared with 1.5 eV for CdTe. This lower band-gap enabled a current density increase from approximately 26 to over 28 mA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . The open-circuit voltage obtained in the high-efficiency CdTe-only device was maintained and the fill-factor remained close to 80%. Improving the short-circuit current density and maintaining the open-circuit voltage lead to device efficiency over 19%. External quantum efficiency implied that about half the current was generated in the CdSeTe layer and half in the CdTe. Cross-sectional STEM and EDS showed good grain structure throughout. Diffusion of Se into the CdTe layer was observed. This is the highest efficiency polycrystalline CdTe photovoltaic device demonstrated by a university or national laboratory.

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