Статья

Efficient electrical control of thin-film black phosphorus bandgap

Bingchen DengDepartment of Electrical Engineering, Yale University, 15 Prospect St Becton 519, New Haven, Connecticut 06511, USAVy TranDepartment of Physics, Washington University, St Louis, Missouri 63130, USAYujun XieDepartment of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511, USAHao JiangDepartment of Electrical and Computer Engineering, University of Massachusetts, Amherst, Massachusetts 01003, USACheng LiDepartment of Electrical Engineering, Yale University, 15 Prospect St Becton 519, New Haven, Connecticut 06511, USAQiushi GuoDepartment of Electrical Engineering, Yale University, 15 Prospect St Becton 519, New Haven, Connecticut 06511, USAXiaomu WangDepartment of Electrical Engineering, Yale University, 15 Prospect St Becton 519, New Haven, Connecticut 06511, USAHe TianMing Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089, USASteven J. KoesterDepartment of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, USAHan WangMing Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089, USAJ. JudyDepartment of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511, USAQiangfei XiaDepartment of Electrical and Computer Engineering, University of Massachusetts, Amherst, Massachusetts 01003, USALi YangDepartment of Physics, Washington University, St Louis, Missouri 63130, USAFengnian XiaDepartment of Electrical Engineering, Yale University, 15 Prospect St Becton 519, New Haven, Connecticut 06511, USA

2017en

ABI

Аннотация

Abstract Recently rediscovered black phosphorus is a layered semiconductor with promising electronic and photonic properties. Dynamic control of its bandgap can allow for the exploration of new physical phenomena. However, theoretical investigations and photoemission spectroscopy experiments indicate that in its few-layer form, an exceedingly large electric field in the order of several volts per nanometre is required to effectively tune its bandgap, making the direct electrical control unfeasible. Here we reveal the unique thickness-dependent bandgap tuning properties in intrinsic black phosphorus, arising from the strong interlayer electronic-state coupling. Furthermore, leveraging a 10 nm-thick black phosphorus, we continuously tune its bandgap from ∼300 to below 50 meV, using a moderate displacement field up to 1.1 V nm −1 . Such dynamic tuning of bandgap may not only extend the operational wavelength range of tunable black phosphorus photonic devices, but also pave the way for the investigation of electrically tunable topological insulators and semimetals.

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Идентификаторы

DOI: 10.1038/ncomms14474

Цитирования и источники

Цитирований: 2Использованных источников: 0

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