Статья

A Self-Powered Photovoltaic Photodetector Based on a Lateral WSe<sub>2</sub>-WSe<sub>2</sub> Homojunction

Chaoyang TanKey Laboratory of Structure and Functional Regulation of Hybrid Materials (Anhui University), Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. ChinaHuanhuan WangKey Laboratory of Structure and Functional Regulation of Hybrid Materials (Anhui University), Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. ChinaXiangde ZhuAnhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Science, Hefei 230031, P. R. ChinaWenshuai GaoKey Laboratory of Structure and Functional Regulation of Hybrid Materials (Anhui University), Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. ChinaHui LiKey Laboratory of Structure and Functional Regulation of Hybrid Materials (Anhui University), Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. ChinaJiawang ChenKey Laboratory of Structure and Functional Regulation of Hybrid Materials (Anhui University), Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. ChinaGang LiKey Laboratory of Structure and Functional Regulation of Hybrid Materials (Anhui University), Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. ChinaLijie ChenKey Laboratory of Structure and Functional Regulation of Hybrid Materials (Anhui University), Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. ChinaJunmin XuKey Laboratory of Material Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, ChinaXiaozong HuState Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. ChinaLiang LiKey Laboratory of Structure and Functional Regulation of Hybrid Materials (Anhui University), Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. ChinaTianyou ZhaiState Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China

2020en

ABI

Аннотация

Lateral homojunctions made of two-dimensional (2D) layered materials are promising for optoelectronic and electronic applications. Here, we report the lateral WSe2-WSe2 homojunction photodiodes formed spontaneously by thickness modulation in which there are unique band structures of a unilateral depletion region. The electrically tunable junctions can be switched from n–n to p–p diodes, and the corresponding rectification ratio increases from about 1 to 1.2 × 104. In addition, an obvious photovoltaic behavior is observed at zero gate voltage, which exhibits a large open voltage of 0.49 V and a short-circuit current of 0.125 nA under visible light irradiation. In addition, due to the unilateral depletion region, the diode can achieve a high detectivity of 4.4 × 1010 Jones and a fast photoresponse speed of 0.18 ms at Vg = 0 and Vds = 0. The studies not only demonstrated the great potential of the lateral homojunction photodiodes for a self-power photodetector but also allowed for the development of other functional devices, such as a nonvolatile programmable diode for logic rectifiers.

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Идентификаторы

DOI: 10.1021/acsami.0c11456

Цитирования и источники

Цитирований: 2Использованных источников: 0

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