Improved memory performance of ALD grown HfO2 films by nitrogen doping
Jamal AzizChair of Smart Sensor Systems, University of Wuppertal, Wuppertal, GermanyMuhammad Farooq KhanDepartment of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, South KoreaDaniel NeumaierChair of Smart Sensor Systems, University of Wuppertal, Wuppertal, GermanyMuneeb AhmadDepartment of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, South KoreaHonggyun KimDepartment of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, South KoreaShania RehmanDepartment of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, South KoreaEhsan ElahiDepartment of Physics & Astronomy and Graphene Research Institute, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, South KoreaVijay D. ChavanDepartment of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, South KoreaFaisal GhafoorDepartment of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, South KoreaKalyani D. KadamDepartment of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, South KoreaHarshada PatilDepartment of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, South KoreaMohamed OuladsmaneDepartment of Chemistry, College of Science, King Saud University, Riyadh 11451, Saudi Arabia
2023en
ABI
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