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Heterojunction‐Depleted Lead‐Free Perovskite Solar Cells with Coarse‐Grained B‐γ‐CsSnI<sub>3</sub> Thin Films

Ning WangLuminous! Centre of Excellence for Semiconductor Lighting and Displays School of Electrical and Electronic Engineering Nanyang Technological University 50 Nanyang Avenue 639798 SingaporeYuanyuan ZhouSchool of Engineering Brown University Providence RI 02912 USAMing‐Gang JuDepartment of Chemistry University of Nebraska‐Lincoln NE 68588 USAHector F. GarcésSchool of Engineering Brown University Providence RI 02912 USATao DingLuminous! Centre of Excellence for Semiconductor Lighting and Displays School of Electrical and Electronic Engineering Nanyang Technological University 50 Nanyang Avenue 639798 SingaporeShuping PangQingdao Institute of Bioenergy and Bioprocess Technology Chinese Academy of Sciences Qingdao 266101 P. R. ChinaXiao Cheng ZengDepartment of Chemistry University of Nebraska‐Lincoln NE 68588 USANitin P. PadtureSchool of Engineering Brown University Providence RI 02912 USAXiao Wei SunDepartment of Electrical and Electronic Engineering College of Engineering South University of Science and Technology of China Shenzhen 518055 P. R. China
2016en
ABI

Аннотация

Perovskite solar cells (PSCs) have been emerging as a breakthrough photovoltaic technology, holding unprecedented promise for low‐cost, high‐efficiency renewable electricity generation. However, potential toxicity associated with the state‐of‐the‐art lead‐containing PSCs has become a major concern. The past research in the development of lead‐free PSCs has met with mixed success. Herein, the promise of coarse‐grained B‐γ‐CsSnI 3 perovskite thin films as light absorber for efficient lead‐free PSCs is demonstrated. Thermally‐driven solid‐state coarsening of B‐γ‐CsSnI 3 perovskite grains employed here is accompanied by an increase of tin‐vacancy concentration in their crystal structure, as supported by first‐principles calculations. The optimal device architecture for the efficient photovoltaic operation of these B‐γ‐CsSnI 3 thin films is identified through exploration of several device architectures. Via modulation of the B‐γ‐CsSnI 3 grain coarsening, together with the use of the optimal PSC architecture, planar heterojunction‐depleted B‐γ‐CsSnI 3 PSCs with power conversion efficiency up to 3.31% are achieved without the use of any additives. The demonstrated strategies provide guidelines and prospects for developing future high‐performance lead‐free PVs.

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