Работы, цитирующие эту работу

Работ: 2

Работа: ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

1. Enhanced electrical and magnetic properties of (Co, Yb) co-doped ZnO memristor for neuromorphic computing

   Noureddine Elboughdiri, Shahid Iqbal, Sherzod Abdullaev +4

   СтатьяAdvanced Memory and Neural ComputingRSC Advances2023Цитирований: 6

   ABIABI:AkademIndex/openalex/2023.article.000236

2. Dual-doped ZnO-based magnetic semiconductor resistive switching response for memristor-based technologies

   Naveed ur Rehman, Nasir Rahman, Iftikhar Ahmad +8

   СтатьяAdvanced Memory and Neural ComputingJournal of Materials Science Materials in Electronics2024Цитирований: 2

   ABIABI:AkademIndex/openalex/2024.article.000393