Статья

Resolving spatial and energetic distributions of trap states in metal halide perovskite solar cells

Zhenyi NiDepartment of Applied Physical Sciences, University of North Carolina, Chapel Hill, NC 27599, USAChunxiong BaoDepartment of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska–Lincoln, Lincoln, NE 68588, USAYe LiuDepartment of Applied Physical Sciences, University of North Carolina, Chapel Hill, NC 27599, USAQi JiangDepartment of Applied Physical Sciences, University of North Carolina, Chapel Hill, NC 27599, USAWu‐Qiang WuDepartment of Applied Physical Sciences, University of North Carolina, Chapel Hill, NC 27599, USAShangshang ChenDepartment of Applied Physical Sciences, University of North Carolina, Chapel Hill, NC 27599, USAXuezeng DaiDepartment of Applied Physical Sciences, University of North Carolina, Chapel Hill, NC 27599, USABo ChenDepartment of Applied Physical Sciences, University of North Carolina, Chapel Hill, NC 27599, USABarry HartwegSchool of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, AZ 85287, USAZhengshan YuSchool of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, AZ 85287, USAZachary HolmanSchool of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, AZ 85287, USAJinsong HuangDepartment of Applied Physical Sciences, University of North Carolina, Chapel Hill, NC 27599, USA

2020en

ABI

Аннотация

Mapping perovskite trap states The high efficiency of hybrid inorganic-organic perovskite solar cells is mainly limited by defects that trap the charge carriers and lead to unproductive recombination. Ni et al. used drive-level capacitance profiling to map the spatial and energetic distribution of trap states in both polycrystalline and single-crystal perovskite solar cells. The interface trap densities were up to five orders of magnitude higher than the bulk trap densities. Deep traps were mainly located at the interface of perovskites and hole-transport layers, where processing created a high density of nanocrystals. These results should aid efforts aimed at avoiding trap-state formation or passivating such defects. Science , this issue p. 1352

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Идентификаторы

DOI: 10.1126/science.aba0893

Цитирования и источники

Цитирований: 4Использованных источников: 0

Показатели — AkademScholar