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Co‐Self‐Assembled Monolayers Modified NiO<i><sub>x</sub></i> for Stable Inverted Perovskite Solar Cells

Qi CaoDepartment of Applied Physics The Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong SAR 999077 P. R. ChinaTianyue WangDepartment of Applied Physics The Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong SAR 999077 P. R. ChinaXingyu PuState Key Laboratory of Solidification Processing Center for Nano Energy Materials School of Materials Science and Engineering Northwestern Polytechnical University Xi'an 710072 P. R. ChinaXilai HeState Key Laboratory of Solidification Processing Center for Nano Energy Materials School of Materials Science and Engineering Northwestern Polytechnical University Xi'an 710072 P. R. ChinaMingchao XiaoDepartment of Applied Physics The Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong SAR 999077 P. R. ChinaHui ChenState Key Laboratory of Solidification Processing Center for Nano Energy Materials School of Materials Science and Engineering Northwestern Polytechnical University Xi'an 710072 P. R. ChinaLyuchao ZhuangDepartment of Applied Physics The Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong SAR 999077 P. R. ChinaQi WeiDepartment of Applied Physics The Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong SAR 999077 P. R. ChinaHok‐Leung LoiDepartment of Applied Physics The Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong SAR 999077 P. R. ChinaPeng GuoState Key Laboratory of Solidification Processing Center for Nano Energy Materials School of Materials Science and Engineering Northwestern Polytechnical University Xi'an 710072 P. R. ChinaBochun KangDepartment of Applied Physics The Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong SAR 999077 P. R. ChinaGuangpeng FengDepartment of Applied Physics The Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong SAR 999077 P. R. ChinaJing ZhuangDepartment of Applied Physics The Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong SAR 999077 P. R. ChinaGuitao FengDepartment of Applied Physics The Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong SAR 999077 P. R. ChinaXuanhua LiState Key Laboratory of Solidification Processing Center for Nano Energy Materials School of Materials Science and Engineering Northwestern Polytechnical University Xi'an 710072 P. R. ChinaFeng YanDepartment of Applied Physics The Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong SAR 999077 P. R. China
2024en
ABI

Аннотация

Abstract [4‐(3,6‐dimethyl‐9H‐carbazol‐9yl)butyl]phosphonic acid (Me‐4PACz) self‐assembled molecules (SAM) are an effective method to solve the problem of the buried interface of NiO x in inverted perovskite solar cells (PSCs). However, the Me‐4PACz end group (carbazole core) cannot forcefully passivate defects at the bottom of the perovskite film. Here, a Co‐SAM strategy is employed to modify the buried interface of PSCs. Me‐4PACz is doped with phosphorylcholine chloride (PC) to form a Co‐SAM to improve the monolayer coverage and reduce leakage current. The phosphate group and chloride ions (Cl − ) in PC can inhibit NiO x surface defects. Meantime, the quaternary ammonium ions and Cl − in PC can fill organic cations and halogen vacancies in the perovskite film to enable defects passivation. Moreover, Co‐SAM can promote the growth of perovskite crystals, collaboratively solve the problem of buried defects, suppress nonradiative recombination, accelerate carrier transmission, and relieve the residual stress of the perovskite film. Consequently, the Co‐SAM modified devices show power conversion efficiencies as high as 25.09% as well as excellent device stability with 93% initial efficiency after 1000 h of operation under one‐sun illumination. This work demonstrates the novel approach for enhancing the performance and stability of PSCs by modifying Co‐SAM on NiO x .

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