(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
Hiroshi OhnoLaboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Sendai 980-77, JapanAidong ShenLaboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Sendai 980-77, JapanF. MatsukuraLaboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Sendai 980-77, JapanA. OiwaInstitute for Solid State Physics, University of Tokyo, Tokyo 106, JapanAkira EndoInstitute for Solid State Physics, University of Tokyo, Tokyo 106, JapanShingo KatsumotoInstitute for Solid State Physics, University of Tokyo, Tokyo 106, JapanY. IyeInstitute for Solid State Physics, University of Tokyo, Tokyo 106, Japan
1996en
ABI
Аннотация
A new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy. The lattice constant of (Ga,Mn)As films was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x. Well-aligned in-plane ferromagnetic order was observed by magnetization measurements. Magnetotransport measurements revealed the occurrence of anomalous Hall effect in the (Ga,Mn)As layer.
Перевод пока недоступен
Идентификаторы
Цитирования и источники
Цитирований: 3Использованных источников: 0