Polarization-sensitive broadband photodetector using a black phosphorus vertical p–n junction
Hongtao Yuan1] Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA [2] Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USAXiaoge LiuGeballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USAFarzaneh AfshinmaneshGeballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USAWei LiGeballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USAGang XuGeballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USAJie SunGeballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USABiao LianGeballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USAAlberto G. CurtoGeballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USAGuojun Ye1] Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China [2] Key Laboratory of Strongly-coupled Quantum Matter Physics, Chinese Academy of Sciences, Hefei, Anhui 230026, ChinaYasuyuki Hikita1] Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA [2] Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USAZhi‐Xun Shen1] Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA [2] Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USAShou-Cheng Zhang1] Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA [2] Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USAXianhui Chen1] Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China [2] Key Laboratory of Strongly-coupled Quantum Matter Physics, Chinese Academy of Sciences, Hefei, Anhui 230026, China [3] High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, Anhui 230031, China [4] Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, ChinaMark L. Brongersma1] Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA [2] Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USAHarold Y. Hwang1] Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA [2] Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USAYi Cui1] Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA [2] Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
2015en
ABI
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