Статья

Optoelectronic Artificial Synapses Based on Two-Dimensional Transitional-Metal Trichalcogenide

Lei LiuFaculty of Physics and Electronic Science, Hubei Key Laboratory of Ferro- & Piezoelectric Materials and Devices, Hubei University, Wuhan 430062, P.R. ChinaZiqiang ChengDepartment of Applied Physics, East China Jiaotong University, Nanchang 330013, P.R. ChinaBei JiangFaculty of Physics and Electronic Science, Hubei Key Laboratory of Ferro- & Piezoelectric Materials and Devices, Hubei University, Wuhan 430062, P.R. ChinaYanxin LiuFaculty of Physics and Electronic Science, Hubei Key Laboratory of Ferro- & Piezoelectric Materials and Devices, Hubei University, Wuhan 430062, P.R. ChinaYanli ZhangShenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P.R. ChinaFan YangShenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P.R. ChinaJiahong WangShenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P.R. ChinaXue‐Feng YuShenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P.R. ChinaPaul K. ChuDepartment of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong 999077, P.R. ChinaCong YeFaculty of Physics and Electronic Science, Hubei Key Laboratory of Ferro- & Piezoelectric Materials and Devices, Hubei University, Wuhan 430062, P.R. China

2021en

ABI

Аннотация

The memristor is a foundational device for an artificial synapse, which is essential to realize next-generation neuromorphic computing. Herein, an optoelectronic memristor based on a two-dimensional (2D) transitional-metal trichalcogenide (TMTC) is designed and demonstrated. Owing to the excellent optical and electrical characteristics of titanium trisulfide (TiS3), the memristor exhibits stable bipolar resistance switching (RS) as a result of the controllable formation and rupturing of the conductive aluminum filaments. Multilevel storage is realized with light of multiple wavelengths between 400 and 808 nm, and the synaptic properties such as conduction modulation and spiking timing-dependent plasticity (STDP) are achieved. On the basis of the photonic potentiation and electrical habitual ability, Pavlovian-associative learning is successfully established on this TiS3-based artificial synapse. All these results reveal the large potential of 2D TMTCs in artificial neuromorphic chips.

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Идентификаторы

DOI: 10.1021/acsami.1c03202

Цитирования и источники

Цитирований: 2Использованных источников: 0

Показатели — AkademScholar