Surface Engineering of ZnO Nanostructures for Semiconductor‐Sensitized Solar Cells
Jun XuCenter of Super‐Diamond and Advanced Films (COSDAF) Department of Physics and Materials Science City University of Hong Kong, Hong Kong SAR, P. R. China; Shenzhen Research Institute, City University of Hong Kong Shenzhen P. R. ChinaZhenhua ChenCenter of Super‐Diamond and Advanced Films (COSDAF) Department of Physics and Materials Science City University of Hong Kong, Hong Kong SAR, P. R. China; Shenzhen Research Institute, City University of Hong Kong Shenzhen P. R. ChinaJuan Antonio ZapienCenter of Super‐Diamond and Advanced Films (COSDAF) Department of Physics and Materials Science City University of Hong Kong, Hong Kong SAR, P. R. China; Shenzhen Research Institute, City University of Hong Kong Shenzhen P. R. ChinaChun‐Sing LeeCenter of Super‐Diamond and Advanced Films (COSDAF) Department of Physics and Materials Science City University of Hong Kong, Hong Kong SAR, P. R. China; Shenzhen Research Institute, City University of Hong Kong Shenzhen P. R. ChinaWenjun ZhangCenter of Super‐Diamond and Advanced Films (COSDAF) Department of Physics and Materials Science City University of Hong Kong, Hong Kong SAR, P. R. China; Shenzhen Research Institute, City University of Hong Kong Shenzhen P. R. China
2014en
ABI
Аннотация
Semiconductor-sensitized solar cells (SSCs) are emerging as promising devices for achieving efficient and low-cost solar-energy conversion. The recent progress in the development of ZnO-nanostructure-based SSCs is reviewed here, and the key issues for their efficiency improvement, such as enhancing light harvesting and increasing carrier generation, separation, and collection, are highlighted from aspects of surface-engineering techniques. The impact of other factors such as electrolyte and counter electrodes on the photovoltaic performance is also addressed. The current challenges and perspectives for the further advance of ZnO-based SSCs are discussed.
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