Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance Memristor
Feng MiaoHewlett-Packard Laboratories, 1501 Page Mill Rd., Palo Alto, CA 94304, USAJohn Paul StrachanHewlett-Packard Laboratories, 1501 Page Mill Rd., Palo Alto, CA 94304, USAJ. Joshua YangHewlett-Packard Laboratories, 1501 Page Mill Rd., Palo Alto, CA 94304, USAMin‐Xian Max ZhangHewlett-Packard Laboratories, 1501 Page Mill Rd., Palo Alto, CA 94304, USAI. GoldfarbHewlett-Packard Laboratories, 1501 Page Mill Rd., Palo Alto, CA 94304, USAAntonio C. TorrezanHewlett-Packard Laboratories, 1501 Page Mill Rd., Palo Alto, CA 94304, USAP. A. EschbachHewlett-Packard, 1000 NE Circle Blvd., Corvallis, OR 97330, USARonald D. KelleyHewlett-Packard, 1000 NE Circle Blvd., Corvallis, OR 97330, USAG. Medeiros‐RibeiroHewlett-Packard Laboratories, 1501 Page Mill Rd., Palo Alto, CA 94304, USAR. Stanley WilliamsHewlett-Packard Laboratories, 1501 Page Mill Rd., Palo Alto, CA 94304, USA
2011en
ABI
Аннотация
By employing a precise method for locating and directly imaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta(2) O(5) is observed. Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism.
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