Статья

Ultra-Low Switching Voltage Induced by Inserting SiO2Layer in Indium–Tin–Oxide-Based Resistance Random Access Memory

Chih‐Cheng ShihDepartment of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, TaiwanWen‐Jen ChenDepartment of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, USAKuan‐Chang ChangDepartment of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, TaiwanTing‐Chang ChangAdvanced Optoelectronics Technology Center, National Cheng Kung University, Tainan, TaiwanTsung‐Ming TsaiDepartment of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, TaiwanTian-Jian ChuDepartment of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, TaiwanYi‐Ting TsengAdvanced Optoelectronics Technology Center, National Cheng Kung University, Tainan, TaiwanCheng-Hsien WuDepartment of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, TaiwanWan-Ching SuDepartment of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, TaiwanMin-Chen ChenAdvanced Optoelectronics Technology Center, National Cheng Kung University, Tainan, TaiwanHui‐Chun HuangDepartment of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, TaiwanMinghui WangDepartment of Chemistry, National Kaohsiung Normal University, Kaohsiung, TaiwanJung‐Hui ChenDepartment of Chemistry, National Kaohsiung Normal University, Kaohsiung, TaiwanJin‐Cheng ZhengDepartment of Physics, Xiamen University, Xiamen, ChinaSimon M. SzeAdvanced Optoelectronics Technology Center, National Cheng Kung University, Tainan, Taiwan

2016en

ABI

Аннотация

A lower switching voltage of indium-tin-oxide (ITO)-based resistance random access memory (RRAM) with an inserted SiO 2 thin film was presented. The amplitude of switching voltage of device was below 0.2 V whether measured by direct current or alternating current sweep operation. Notably, the observed reset voltage increased with temperature. To clarify the switching mechanism, conduction current fitting and switching voltage statistics were applied to explore the regular voltage variation dependent on temperature. In addition, a reaction model was proposed to explain the oxygen concentration gradient induced between the inserted SiO 2 and ITO electrode on the ITO-based RRAM device.

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Идентификаторы

DOI: 10.1109/led.2016.2599218

Цитирования и источники

Цитирований: 2Использованных источников: 0

Показатели — AkademScholar

Ultra-Low Switching Voltage Induced by Inserting SiO<sub>2</sub>Layer in Indium–Tin–Oxide-Based Resistance Random Access Memory

Аннотация

Идентификаторы

Цитирования и источники