A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory Array
Mohammed ZackriyaDepartment of Electronics Engineering, National Chiao Tung University, Hsinchu 300, TaiwanHarish M. KitturSchool of Electronics Engineering, VIT University, Vellore, IndiaAlbert ChinDepartment of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
2017en
ABI
Аннотация
The major issue of RRAM is the uneven sneak path that limits the array size. For the first time record large One-Resistor (1R) RRAM array of 128x128 is realized, and the array cells at the worst case still have good Low-/High-Resistive State (LRS/HRS) current difference of 378 nA/16 nA, even without using the selector device. This array has extremely low read current of 9.7 μA due to both low-current RRAM device and circuit interaction, where a novel and simple scheme of a reference point by half selected cell and a differential amplifier (DA) were implemented in the circuit design.
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