Работы, цитирующие эту работу

Работ: 2

Работа: Resistive switching and synaptic properties modifications in gallium-doped zinc oxide memristive devices

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   ABIABI:AkademIndex/openalex/2024.article.000258

2. Dual-doped ZnO-based magnetic semiconductor resistive switching response for memristor-based technologies

   Naveed ur Rehman, Nasir Rahman, Iftikhar Ahmad +8

   СтатьяAdvanced Memory and Neural ComputingJournal of Materials Science Materials in Electronics2024Цитирований: 2

   ABIABI:AkademIndex/openalex/2024.article.000393