Перейти к основному содержанию
AkademIndex

Продукты

Для разработчиков

AkademBaseОткрытый API экосистемы
Статья

Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal–semiconductor contacts at the Schottky–Mott limit

Seunguk SongSchool of Materials Science and Engineering and Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, KoreaYeoseon SimSchool of Materials Science and Engineering and Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, KoreaSe‐Yang KimSchool of Materials Science and Engineering and Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, KoreaJung Hwa KimSchool of Materials Science and Engineering and Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, KoreaInseon OhSchool of Materials Science and Engineering and Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, KoreaWoongki NaDepartment of Physics, Sogang University, Seoul, KoreaDo Hee LeeSchool of Materials Science and Engineering and Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, KoreaJaewon WangSchool of Materials Science and Engineering and Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, KoreaShili YanBeijing Academy of Quantum Information Sciences, Beijing, P. R. ChinaYinan LiuInternational Center for Quantum Materials, School of Physics, Peking University, Beijing, P. R. ChinaJinsung KwakSchool of Materials Science and Engineering and Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, KoreaJianhao ChenBeijing Academy of Quantum Information Sciences, Beijing, P. R. ChinaHyeonsik CheongDepartment of Physics, Sogang University, Seoul, KoreaJung‐Woo YooSchool of Materials Science and Engineering and Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, KoreaZonghoon LeeCenter for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, KoreaSoon‐Yong KwonSchool of Materials Science and Engineering and Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, Korea
2020en
ABI

Аннотация

Аннотация отсутствует.

Идентификаторы

Цитирования и источники

Цитирований: 2Использованных источников: 0