Enhanced near infrared and gate tunable photoresponse of MoSe2 transistor enabled by 2D hetero contact engineering
Ehsan ElahiDepartment of Physics & Astronomy, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul, 05006 South KoreaMuhammad RabeelDepartment of Convergence Engineering for Intelligent Drone, Sejong University, Seoul, 05006, South KoreaShania RehmanDepartment of Semiconductor System Engineering, Sejong University, Seoul, 05006, South KoreaMuhammad Asghar KhanDepartment of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul, 05006, South KoreaJamal AzizChair of Smart Sensor Systems, University of Wuppertal, Wuppertal, GermanyMuhammad AbubakrDepartment of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul, 05006, South KoreaMalik Abdul RehmanDepartment of Chemical Engineering, New Uzbekistan University, Tashkent 100007, UzbekistanShabbir Ahmad KhanGovt Postgraduate College Timergara, Dir Lower, KPK, PakistanSaikh Mohammad WabaidurChemistry Department, College of Science, King Saud University, Riyadh 11451, Saudi ArabiaMohammad Rezaul KarimDepartment of Mechanical Engineering, College of Engineering, King Saud University, Riyadh, 11451, Saudi ArabiaMuhammad Farooq KhanDepartment of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul, 05006, South Korea
ABI
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