Experimental Determination of the Subband Electron Effective Mass in InGaAs/InAlAs HEMT-structures by the Shubnikov – de Haas Effect at Two Temperatures
N. A. YuzeevaInstitute of Ultra High Frequency Semiconductor Electronics of Russian Academy of Sciences, Moscow 117105, RussiaГ. Б. ГалиевInstitute of Ultra High Frequency Semiconductor Electronics of Russian Academy of Sciences, Moscow 117105, RussiaE. A. KlimovInstitute of Ultra High Frequency Semiconductor Electronics of Russian Academy of Sciences, Moscow 117105, RussiaL. N. OveshnikovNational Research Center, Kurchatov Institute, Moscow 123182, RussiaR. A. LuninM.V. Lomonosov Moscow State University, Moscow 119991, RussiaV. A. Kulbachinskiı̆M.V. Lomonosov Moscow State University, Moscow 119991, Russia
2015en
ABI
Аннотация
The electron effective masses m* in different dimensionally quantized subbands in InGaAs/InAlAs HEMT-structures have been measured by the Shubnikov – de Haas effect at two temperatures whose ratio was not equal to 2. The electron effective masses were found separately for the every subband. It was realized by digital bandpass filtering of the Shubnikov – de Haas oscillation to monochromatic oscillations corresponding to subbands. We obtained the dependence of m* in every subband on InAs content in quantum well.
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