Strain Effects on Rashba Spin‐Orbit Coupling of 2D Hole Gases in GeSn/Ge Heterostructures
Chia‐Tse TaiGraduate Institute of Electronics Engineering National Taiwan University Taipei 106 TaiwanPo‐Yuan ChiuGraduate Institute of Electronics Engineering National Taiwan University Taipei 106 TaiwanChia-You LiuGraduate Institute of Electronics Engineering National Taiwan University Taipei 106 TaiwanHsiang‐Shun KaoGraduate Institute of Electronics Engineering National Taiwan University Taipei 106 TaiwanCharles Thomas HarrisCenter for Integrated Nanotechnologies Sandia National Laboratory, Albuquerque Albuquerque NM 87185 USATzu‐Ming LuCenter for Integrated Nanotechnologies Sandia National Laboratory, Albuquerque Albuquerque NM 87185 USAChi‐Ti HsiehResearch Center for Applied Sciences Academia Sinica Taipei 115 TaiwanShu‐Wei ChangResearch Center for Applied Sciences Academia Sinica Taipei 115 TaiwanJiun‐Yun LiDepartment of Electrical Engineering National Taiwan University Taipei 106 Taiwan
2021en
ABI
Аннотация
is given. Both the Shubnikov-de Haas oscillations and integer quantum Hall effect are observed, indicating high sample quality. The Rashba spin-orbit coupling (SOC) is investigated via magneto-transport. Further, a transition from weak localization to weak anti-localization is observed, which shows the tunability of the SOC strength by gating. The magneto-transport data are fitted to the Hikami-Larkin-Nagaoka formula. The phase-coherence and spin-relaxation times, as well as spin-splitting energy and Rashba coefficient of the k-cubic term, are extracted. The analysis reveals that the effects of strain and confinement potential at a high fraction of Sn suppress the Rashba SOC caused by the GeSn/Ge heterostructures.
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