Работы, цитирующие эту работу

Работ: 1

Работа: Methods for determining deep defect concentration from dependence of excess carrier density and lifetime on illumination intensity

1. Characterization of deep defects in CdxHg1 xTe by injection-level spectroscopy of carrier lifetime

   V. A. Gnatyuk, Smagul Karazhanov

   Статья2002Цитирований: 0

   ABIABI:AkademIndex/openalex/2002.article.000408