Работы, цитирующие эту работу

Работ: 4

Работа: ABI:AkademIndex/openalex/2026.other.1120682

1. Impurity photovoltaic effect in indium-doped silicon solar cells

   Smagul Karazhanov

   Статья2001Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.610776

2. Mechanisms for the anomalous dependence of carrier lifetime on injection level and photoconductance on light intensity

   Smagul Karazhanov

   Статья2001Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.504989

3. Methods for determining deep defect concentration from dependence of excess carrier density and lifetime on illumination intensity

   Smagul Karazhanov

   Статья2001Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.1120680

4. Characterization of deep defects in CdxHg1 xTe by injection-level spectroscopy of carrier lifetime

   V. A. Gnatyuk, Smagul Karazhanov

   Статья2002Цитирований: 0

   ABIABI:AkademIndex/openalex/2002.article.000408