Photoluminescence Spectra of InAs/GaInSb/InAs Quantum Wells in the Mid-Infrared Region
V. V. UtochkinInstitute for Physics of Microstructures, Russian Academy of Sciences, 603087, Nizhny Novgorod, RussiaM. A. FadeevInstitute for Physics of Microstructures, Russian Academy of Sciences, 603087, Nizhny Novgorod, RussiaS. S. KrishtopenkoLaboratoire Charles Coulomb, CNRS & Université Montpellier, 34095, Montpellier, FranceV. V. RumyantsevInstitute for Physics of Microstructures, Russian Academy of Sciences, 603087, Nizhny Novgorod, RussiaV. Ya. AleshkinInstitute for Physics of Microstructures, Russian Academy of Sciences, 603087, Nizhny Novgorod, RussiaА. А. ДубиновInstitute for Physics of Microstructures, Russian Academy of Sciences, 603087, Nizhny Novgorod, RussiaS. V. MorozovInstitute for Physics of Microstructures, Russian Academy of Sciences, 603087, Nizhny Novgorod, RussiaB. R. SemyaginInstitute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, RussiaМ. А. PutyatoInstitute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, RussiaE. A. EmelyanovInstitute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, RussiaВ. В. ПреображенскийInstitute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, RussiaV. I. GavrilenkoInstitute for Physics of Microstructures, Russian Academy of Sciences, 603087, Nizhny Novgorod, Russia
2020en
ABI
Аннотация
The photoluminescence spectra of waveguide AlSb/InAs/GaInSb/InAs/AlSb quantum-well heterostructures designed for the generation of radiation at interband transitions in the mid-infrared region have been studied. The experimentally detected spectral lines are correlated with calculations of the band structure.
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