Статья

Design and Simulation of Cs<sub>2</sub>BiAgI<sub>6</sub> Double Perovskite Solar Cells with Different Electron Transport Layers for Efficiency Enhancement

M. Khalid HossainDepartment of Advanced Energy Engineering Science, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Fukuoka 816-8580, JapanDip Prakash SamajdarDept. of ECE, Indian Institute of Information Technology, Design & Manufacturing, Madhya Pradesh 482005, IndiaRanjit Chandra DasMaterials Science and Engineering, Florida State University, Tallahassee, Florida 32306, United StatesA. A. ArnabDepartment of Electrical & Electronic Engineering, Ahsanullah University of Science and Technology, Dhaka 1208, BangladeshMd. Ferdous RahmanDepartment of Electrical and Electronic Engineering, Begum Rokeya University, Rangpur 5400, BangladeshMirza H. K. RubelDepartment of Materials Science and Engineering, University of Rajshahi, Rajshahi 6205, BangladeshMd. Rasidul IslamDepartment of Electrical and Electronic Engineering, Bangamata Sheikh Fojilatunnesa Mujib Science & Technology University, Jamalpur 2012, BangladeshH. BencherifRahul PandeyVLSI Centre of Excellence, Chitkara University Institute of Engineering and Technology, Chitkara University, Rajpura 140401, Punjab, IndiaJaya MadanVLSI Centre of Excellence, Chitkara University Institute of Engineering and Technology, Chitkara University, Rajpura 140401, Punjab, IndiaMustafa K. A. MohammedRadiological Techniques Department, Al-Mustaqbal University College, 51001 Hillah, Babylon, Iraq

2023en

ABI

Аннотация

Lead-free Cs2BiAgI6 has garnered a lot of research interest recently due to its suitability as a potential absorber layer in the solar cell (SC) architecture owing to its low cost, good stability, and high efficiency. The main highlight of this research work includes the photovoltaic (PV) performance enhancement of Cs2BiAgI6 double perovskite solar cells (PSCs) by optimizing the optoelectronic parameters of the absorber, electron transport layer (ETL), hole transport layer (HTL), and various interface layers. Solar Cell Capacitance Simulator One dimension (SCAPS-1D) numerical simulation was used to optimize the performance of Cs2BiAgI6 absorber-based SCs consisting of copper barium thiostannate (CBTS) as the HTL and TiO2, PCBM, ZnO, IGZO, SnO2, and WS2 as ETLs. The role of the non-lead cesium-based halide perovskite absorber layer in the improvement of the SC performance was systematically investigated through a variation in the thickness, doping density, and defect density of the absorber layer, ETL, and HTL. The performance of the investigated device architectures is largely dependent on the thickness of the absorber layer, acceptor density, defect density, and the combination of different ETLs and HTLs. We found that TiO2, PCBM, ZnO, IGZO, SnO2, and WS2 ETL-based optimized devices recorded a power conversion efficiency (PCE) of 23.14, 23.71, 23.69, 22.97, 23.61, and 21.72%, respectively. Furthermore, the effect of series and shunt resistances, temperature, capacitance, and Mott–Schottky for the six optimized devices was estimated along with the computation of the corresponding generation and recombination rates, current density–voltage (J–V), and quantum efficiency (QE) characteristics. The PV parameters obtained from this comprehensive analysis are finally compared with the earlier published theoretical and experimental reports on Cs2BiAgI6 absorber-based SCs.

Перевод пока недоступен

Идентификаторы

DOI: 10.1021/acs.energyfuels.3c00181

Цитирования и источники

Цитирований: 2Использованных источников: 0

Показатели — AkademScholar