Работы, цитирующие эту работу

Работ: 5

Работа: Nanoionics-based resistive switching memories

1. High-stability resistive switching memristor with high-retention memory window response for brain-inspired computing

   Rajwali Khan, Shahid Iqbal, Kwun Nam Hui +4

   СтатьяAdvanced Memory and Neural ComputingSensors and Actuators A Physical2025Цитирований: 2

   ABIABI:AkademIndex/openalex/2025.article.000136

2. Correlation between Resistance Switching States and Photoluminescence Emission in ZnO Films

   Vadim Sh. Yalishev, Sh. U. Yuldashev, Yeon Soo Kim +1

   СтатьяZnO doping and propertiesApplied Physics Express2011Цитирований: 0

   ABIABI:AkademIndex/openalex/2011.article.000205

3. Tunable defect engineering in TiON thin films by multi-step sputtering processes: from a Schottky diode to resistive switching memory

   Teng‐Yu Su, Chi‐Hsin Huang, Yu‐Chuan Shih +5

   СтатьяAdvanced Memory and Neural ComputingJournal of Materials Chemistry C2017Цитирований: 0

   ABIABI:AkademIndex/openalex/2017.article.000071

4. Magnetically Tunable Resistive Switching in Mn-Doped SnO ₂ Thin Films

   Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +3

   СтатьяZnO doping and propertiesCrystal Growth & Design2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.013968

5. Defect-engineered resistive switching and NDR behavior in Mn-doped SnO2 memristors

   Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +3

   СтатьяAdvanced Memory and Neural ComputingJournal of Materials Science Materials in Electronics2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.020423