Статья

Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications

Johannes MüllerFraunhofer Center Nanoelectronic Technologies (CNT) 1 , Dresden 01099, GermanyT. S. Böscke2Löberwallgraben 2, Erfurt 99096, GermanyD. BräuhausRWTH Aachen, Institut für Werkstoffe der Elektrotechnik 3 , Aachen 52074, GermanyU. SchröderNamlab gGmbH 4 , Dresden 01187, GermanyU. BöttgerRWTH Aachen, Institut für Werkstoffe der Elektrotechnik 3 , Aachen 52074, GermanyJonas SundqvistFraunhofer Center Nanoelectronic Technologies (CNT) 1 , Dresden 01099, GermanyP. KücherFraunhofer Center Nanoelectronic Technologies (CNT) 1 , Dresden 01099, GermanyThomas MikolajickNamlab gGmbH 4 , Dresden 01187, GermanyL. FreyFraunhofer Institute of Integrated Systems and Device Technology (IISB) 6 , Erlangen 91058, Germany

2011en

ABI

Аннотация

We report the observation of ferroelectricity in capacitors based on hafnium-zirconium-oxide. Hf0.5Zr0.5O2 thin films of 7.5 to 9.5 nm thickness were found to exhibit ferroelectric polarization-voltage hysteresis loops when integrated into TiN-based metal-insulator-metal capacitors. A remnant polarization of 16 μC/cm2 and a high coercive field of 1 MV/cm were observed. Further proof for the ferroelectric nature was collected by quasi-static polarization-voltage hysteresis, small signal capacitance-voltage, and piezoelectric measurements. Data retention characteristics were evaluated by a Positive Up Negative Down pulse technique. No significant decay of the initial polarization state was observed within a measurement range of up to two days.

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Идентификаторы

DOI: 10.1063/1.3636417

Цитирования и источники

Цитирований: 2Использованных источников: 0

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