Работы, цитирующие эту работу

Работ: 4

Работа: Resistive switching properties in ferromagnetic co-doped ZnO thin films-based memristors for neuromorphic computing

1. Dual-doped ZnO-based magnetic semiconductor resistive switching response for memristor-based technologies

   Naveed ur Rehman, Nasir Rahman, Iftikhar Ahmad +8

   СтатьяAdvanced Memory and Neural ComputingJournal of Materials Science Materials in Electronics2024Цитирований: 2

   ABIABI:AkademIndex/openalex/2024.article.000393

2. High-stability resistive switching memristor with high-retention memory window response for brain-inspired computing

   Rajwali Khan, Shahid Iqbal, Kwun Nam Hui +4

   СтатьяAdvanced Memory and Neural ComputingSensors and Actuators A Physical2025Цитирований: 2

   ABIABI:AkademIndex/openalex/2025.article.000136

3. Tailoring ferromagnetic and dielectric properties in ZnO via (Eu, Co) doping for spin-based electronic devices

   Khaled Althubeiti, Sattam Al Otaibi, Sherzod Abdullaev +3

   СтатьяZnO doping and propertiesJournal of Materials Science Materials in Electronics2025Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.121036

4. Charge transport and ferromagnetic interactions in Ti double-doped ZnO nanorods for spin electronic applications

   Khaled Althubeiti, Sattam Al Otaibi, Sherzod Abdullaev +4

   СтатьяZnO doping and propertiesJournal of Saudi Chemical Society2025Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.121037