Joint density of states in interband transitions in semiconductors in a magnetic field

We consider impurity collision broadening of electron and hole Landau levels in a magnetic field, and the effect of electron-hole correlated impurity scattering to all orders on the joint density of states of interband transitions in a semiconductor. These renormalization mechanisms eliminate the divergences in the density of states associated with the unperturbed states for electrons and holes at Landau levels. This calculation has relevance in several physical situations involving interband transitions in the presence of a magnetic field; in particular, we discuss the calculation of gain for stimulated plasmon emission by electron-hole recombination in narrow-band-gap semiconductors.

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