Работы, цитирующие эту работу

Работ: 2

Работа: Enhanced stability of filament-type resistive switching by interface engineering

1. Dual-doped ZnO-based magnetic semiconductor resistive switching response for memristor-based technologies

   Naveed ur Rehman, Nasir Rahman, Iftikhar Ahmad +8

   СтатьяAdvanced Memory and Neural ComputingJournal of Materials Science Materials in Electronics2024Цитирований: 2

   ABIABI:AkademIndex/openalex/2024.article.000393

2. Memristive Devices from CuO Nanoparticles

   Pundalik D. Walke, Abu ul Hassan S. Rana, Sh. U. Yuldashev +5

   СтатьяAdvanced Memory and Neural ComputingNanomaterials2020Цитирований: 1

   ABIABI:AkademIndex/openalex/2020.article.000254