Статья

A resistive switching memory device with a negative differential resistance at room temperature

Mayameen S. KadhimKey Laboratory of Advanced Technology of Materials, Ministry of Education, Southwest Jiaotong University 2 , Chengdu, Sichuan 610031, ChinaFeng YangKey Laboratory of Advanced Technology of Materials, Ministry of Education, Southwest Jiaotong University 2 , Chengdu, Sichuan 610031, ChinaBai SunKey Laboratory of Advanced Technology of Materials, Ministry of Education, Southwest Jiaotong University 2 , Chengdu, Sichuan 610031, ChinaYushu WangSchool of Materials Science and Engineering, Georgia Institute of Technology 5 , Atlanta, Georgia 30318, USATao GuoKey Laboratory of Advanced Technology of Materials, Ministry of Education, Southwest Jiaotong University 2 , Chengdu, Sichuan 610031, ChinaYongfang JiaKey Laboratory of Advanced Technology of Materials, Ministry of Education, Southwest Jiaotong University 2 , Chengdu, Sichuan 610031, ChinaLing YuanKey Laboratory of Advanced Technology of Materials, Ministry of Education, Southwest Jiaotong University 2 , Chengdu, Sichuan 610031, ChinaYanmei YuKey Laboratory of Advanced Technology of Materials, Ministry of Education, Southwest Jiaotong University 2 , Chengdu, Sichuan 610031, ChinaYong ZhaoKey Laboratory of Advanced Technology of Materials, Ministry of Education, Southwest Jiaotong University 2 , Chengdu, Sichuan 610031, China

2018en

ABI

Аннотация

In this study, large-area ZnO nanorod arrays covering a Zn foil substrate were produced by a low-cost and low temperature approach. In this approach, oxidation of zinc metal was achieved in a formamide/water mixture. Taking advantage of the product, a sandwiched structure, Ag/ZnO/Zn, was fabricated in which Ag acts as the top electrode, ZnO as the active layer and Zn foil as the bottom electrode. Resistive switching memory behavior (with an HRS/LRS resistance ratio of ∼10) along with a negative differential resistance effect (the largest slope being −3.85) was synchronously observed for this device at room temperature. This device opens up possibilities for multifunctional components in future electronic applications.

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Идентификаторы

DOI: 10.1063/1.5037191

Цитирования и источники

Цитирований: 2Использованных источников: 0

Показатели — AkademScholar