Статья

All-Optical Switching of Two Continuous Waves in Few Layer Bismuthene Based on Spatial Cross-Phase Modulation

Lu LuShenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology, Shenzhen 518060, China Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaWenhui WangShenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology, Shenzhen 518060, China Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaLeiming WuFaculty of Information Technology, Macau University of Science and Technology, Macao 519020, SAR, People’s Republic of ChinaXiantao JiangShenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology, Shenzhen 518060, China Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaYuanjiang XiangShenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology, Shenzhen 518060, China Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaJianqing LiFaculty of Information Technology, Macau University of Science and Technology, Macao 519020, SAR, People’s Republic of ChinaDianyuan FanShenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology, Shenzhen 518060, China Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaHan ZhangShenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology, Shenzhen 518060, China Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China

2017en

ABI

Аннотация

Bismuthene, the last and heaviest group-VA elemental two-dimensional material, has received tremendous interests owing to its advantages in electronic-transport, semimetallic bonding, and intrinsic spin-orbit coupling. However, light–bismuthene interaction is relatively less investigated. Herein, sonochemical exfoliation approach had been employed to deliver a successful synthesis of few-layer bismuthene with an average thickness of ∼3 nm and a lateral size of ∼0.2 μm. The corresponding band structure from mono- to sextuple-layer had been therotically calculated and it was found that bismuthene possesses a thickness dependent energy gap from almost zero to 0.55 eV, suggesting that bismuthene may also find unique applications from terahertz, mid-infrared toward infrared regime. The nonlinear optical absorption and refraction parameters had been well characterized by laser Z-scan and spatial phase modulation measurement techniques, respectively. By taking advantage of its strong nonlinear refraction effect, all optical switching of two different laser beams based on spatial cross-phase modulation had been eventually realized. It is further found that a modulated signal light clearly observed as switch light is turned on. The achievement of all optical switching suggests that the bismuthene-based 2D material is indeed an excellent candidate for an all optical switcher. Particularly, the semimetallic and long-term stable property in few layer bismuthene make it as a promising nonlinear optical material for infrared and mid-infrared optoelectronics. Our work demonstrates a large potential of this new material for nonlinear photonics and this contribution may provide new photonics avenue toward bismuthene-based devices (such as broadband detector, nonlinear optical switcher, phase modulator, etc.).

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Идентификаторы

DOI: 10.1021/acsphotonics.7b00849

Цитирования и источники

Цитирований: 2Использованных источников: 0

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