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Multiphonon Raman Spectrum of Silicon

P. A. TempleDepartment of Physics, Kansas State University, Manhattan, Kansas 66502C. E. HathawayDepartment of Physics, Kansas State University, Manhattan, Kansas 66502
1973en
ABI

Аннотация

The energy and polarization characteristics of the one- and two-phonon Raman spectrum have been measured using a 180\ifmmode^\circ\else\textdegree\fi{} backscattering technique. The two-phonon spectrum was measured at 20, 80, and 305\ifmmode^\circ\else\textdegree\fi{}K. The one-phonon spectrum was measured at 17, 30, 80, and 305 \ifmmode^\circ\else\textdegree\fi{}K. The one-phonon line of symmetry ${\ensuremath{\Gamma}}_{25}$, was shown to be Lorentzian and to have a deconvoluted half-width at 17 \ifmmode^\circ\else\textdegree\fi{}K of 1.45 \ifmmode\pm\else\textpm\fi{} 0.05 ${\mathrm{cm}}^{\ensuremath{-}1}$. The two-phonon Raman spectrum was used to determine phonon energies at the four critical points $\ensuremath{\Gamma}$, $X$, $L$, and $W$.

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