Статья

Atomic imaging and optical properties of InAs/In0.5Ga0.5As0.5Sb0.5 type II superlattice

Chao ShiState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 1 , Changchun 130022, People's Republic of ChinaDengkui WangDepartment of Opto-Electronic Information Science, School of Materials Science and Engineering, Harbin Institute of Technology 3 , Harbin 150001, People's Republic of ChinaWeijie LiState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 1 , Changchun 130022, People's Republic of ChinaXuan FangState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 1 , Changchun 130022, People's Republic of ChinaBin ZhangAnalytical and Testing Center, Chongqing University 2 , Chongqing 401331, People's Republic of ChinaDongbo WangDepartment of Opto-Electronic Information Science, School of Materials Science and Engineering, Harbin Institute of Technology 3 , Harbin 150001, People's Republic of ChinaYu HaoState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 1 , Changchun 130022, People's Republic of ChinaDan FangState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 1 , Changchun 130022, People's Republic of ChinaHongbin ZhaoState Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals 4 , Beijing 100088, People's Republic of ChinaPeng DuCollege of Electrical Engineering, University of South China 5 , Hengyang 421001, People's Republic of ChinaJinhua LiState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 1 , Changchun 130022, People's Republic of China

2024en

ABI

Аннотация

High-quality III–V quantum structures, advanced epitaxial technologies, and characterization methods are essential to drive the development of infrared optoelectronic materials and devices. As an important component of type II superlattices, InAs/InxGa1−xAsySb1−y would play an important role in the field of high-performance infrared detectors due to their excellent luminescence efficiency and high crystal quality. However, their interfacial characteristics and the associated minority carrier lifetime are still difficult to identify. In this paper, an atomic imaging technique was used to identify the arrangement and distribution of elements of the InAs/In0.5Ga0.5As0.5Sb0.5 superlattice. Our results confirm the epitaxy mechanism that the quaternary alloy consists of two kinds of ternary alloy in one monolayer. Moreover, by separating the cation and anion columns in the elementally resolved atomic images of the InAs/In0.5Ga0.5As0.5Sb0.5 superlattice, we demonstrate that the interfacial atomic intermixing is less than one molecular layer thickness. Therefore, benefiting from excellent interface quality, InAs/In0.5Ga0.5As0.5Sb0.5 superlattice exhibited high radiation recombination efficiency in the long-wave infrared band (∼8.5 μm), and longer minority carrier lifetime (∼810 ns at 90 K).

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Идентификаторы

DOI: 10.1063/5.0209805

Цитирования и источники

Цитирований: 3Использованных источников: 0

Показатели — AkademScholar