Ambipolar MoTe<sub>2</sub> Transistors and Their Applications in Logic Circuits
Yen‐Fu LinDepartment of Physics National Chung‐Hsing University Taichung 40227 TaiwanYong XuWPI Center for Materials Nanoarchitechtonics (WPI‐MANA), National Institute for Materials Science (NIMS) Tsukuba Ibaraki 305‐0044 JapanSheng‐Tsung WangDepartment of Electrophysics National Chiao Tung University Hsinchu 30010 TaiwanSonglin LiWPI Center for Materials Nanoarchitechtonics (WPI‐MANA), National Institute for Materials Science (NIMS) Tsukuba Ibaraki 305‐0044 JapanMahito YamamotoWPI Center for Materials Nanoarchitechtonics (WPI‐MANA), National Institute for Materials Science (NIMS) Tsukuba Ibaraki 305‐0044 JapanA. Aparecido-FerreiraWPI Center for Materials Nanoarchitechtonics (WPI‐MANA), National Institute for Materials Science (NIMS) Tsukuba Ibaraki 305‐0044 JapanWenwu LiWPI Center for Materials Nanoarchitechtonics (WPI‐MANA), National Institute for Materials Science (NIMS) Tsukuba Ibaraki 305‐0044 JapanHuabin SunWPI Center for Materials Nanoarchitechtonics (WPI‐MANA), National Institute for Materials Science (NIMS) Tsukuba Ibaraki 305‐0044 JapanShu NakaharaiWPI Center for Materials Nanoarchitechtonics (WPI‐MANA), National Institute for Materials Science (NIMS) Tsukuba Ibaraki 305‐0044 JapanWen‐Bin JianDepartment of Electrophysics National Chiao Tung University Hsinchu 30010 TaiwanKeiji UenoDepartment of Chemistry Graduate School of Science and Engineering, Saitama University Saitama 338‐8570 JapanKazuhito TsukagoshiWPI Center for Materials Nanoarchitechtonics (WPI‐MANA), National Institute for Materials Science (NIMS) Tsukuba Ibaraki 305‐0044 Japan
2014en
ABI
Аннотация
We report ambipolar charge transport in α-molybdenum ditelluride (MoTe2 ) flakes, whereby the temperature dependence of the electrical characteristics was systematically analyzed. The ambipolarity of the charge transport originated from the formation of Schottky barriers at the metal/MoTe2 contacts. The Schottky barrier heights as well as the current on/off ratio could be modified by modulating the electrostatic fields of the back-gate voltage (Vbg) and drain-source voltage (Vds). Using these ambipolar MoTe2 transistors we fabricated complementary inverters and amplifiers, demonstrating their feasibility for future digital and analog circuit applications.
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